UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures

نویسندگان

چکیده

Core-shell GaN/AlGaN multiple quantum wells (MQWs) embedded in a p–n junction are integrated on the upper part of GaN microwires grown by silane-assisted metal organic vapor phase epitaxy. Dispersed wires then contacted electron beam induced deposition for fabrication single wire UV-LED devices. Rectifying diode-like behavior is first demonstrated both and p-n junctions without MQW active region. A weak leakage current core-shell heterostructure attributed to an additional conduction path along sidewalls. Electroluminescence at 340 nm UV-A using (2.6 nm)/Al0.3Ga0.7N (3 nm) GaN/Al0.3Ga0.7N junction. This value even decreased 310 reducing well thickness 0.9 increasing Al-content barriers (up 60%) work demonstrates UV-B emission based UV-LEDs.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2022

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0101591